? 2012 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 175 c 100 v v dgr t j = 25 c to 175 c, r gs = 1m 100 v v gss continuous 20 v v gsm transient 30 v i d25 t c = 25 c 334 a i dm t c = 25 c, pulse width limited by t jm 1000 a i a t c = 25 c 200 a e as t c = 25 c5j p d t c = 25 c 680 w dv/dt i s i dm , v dd v dss , t j 175 c 20 v/ns t j -55 ... +175 c t jm 175 c t stg -55 ... +175 c t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10s 260 c v isol 50/60 hz, 1 minute 2500 v~ f c mounting force 50..200 / 11..45 n/lb. weight 8 g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 3ma 100 v v gs(th) v ds = v gs , i d = 8ma 2.5 5.0 v i gss v gs = 20v, v ds = 0v 200 na i dss v ds = v dss , v gs = 0v 50 a t j = 150 c 5 ma r ds(on) v gs = 10v, i d = 60a, note 1 2.6 m n-channel enhancement mode avalanche rated fast intrinsic diode MMIX1F420N10T ds100410(01/12) v dss = 100v i d25 = 334a r ds(on) 2.6m features z silicon chip on direct-copper bond (dcb) substrate z isolated substrate - excellent thermal transfer - increased temperature and power cycling capability - high isolation voltage (2500 v~) z 175c operating temperature z very high current handling capability z fast intrinsic diode z avalanche rated z very low r ds(on) advantages z easy to mount z space savings z high power density applications z dc-dc converters and off-line ups z primary-side switch z high speed power switching applications advance technical information (electrically isolated tab) gigamos tm trench tm hiperfet tm power mosfet g d s isolated tab d s g g = gate d = drain s = source t rr 140ns
ixys reserves the right to change limits, test conditions, and dimensions. MMIX1F420N10T ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 note 1. pulse test, t 300 s, duty cycle, d 2%. symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10v, i d = 60a, note 1 110 185 s c iss 47 nf c oss v gs = 0v, v ds = 25v, f = 1mhz 4390 pf c rss 530 pf r gi gate input resistance 1.46 t d(on) 47 ns t r 155 ns t d(off) 115 ns t f 255 ns q g(on) 670 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 210a 170 nc q gd 195 nc r thjc 0.22 c/w r thcs 0.05 c/w source-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. i s v gs = 0v 420 a i sm repetitive, pulse width limited by t jm 1680 a v sd i f = 60a, v gs = 0v, note 1 1.2 v t rr 140 ns i rm 7 a q rm 380 nc resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 100a r g = 1 (external) i f = 150a, v gs = 0v -di/dt = 100a/ s v r = 60v advance technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice.
? 2012 ixys corporation, all rights reserved MMIX1F420N10T fig. 1. output characteristics @ t j = 25oc 0 50 100 150 200 250 300 350 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 v ds - volts i d - amperes v gs = 15v 10v 8v 7v 4v 6v 5v fig. 3. output characteristics @ t j = 150oc 0 40 80 120 160 200 240 280 320 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 v ds - volts i d - amperes v gs = 15v 10v 8v 7v 5 v 6 v 4 v 4.5v fig. 4. normalized r ds(on) vs. junction temperature 0.4 0.8 1.2 1.6 2.0 2.4 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d < 420a fig. 5. normalized r ds(on) vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 0 50 100 150 200 250 300 350 i d - amperes r ds(on) - normalized v gs = 10v t j = 175oc t j = 25oc fig. 6. drain current vs. case temperature 0 50 100 150 200 250 300 350 -50 -25 0 25 50 75 100 125 150 175 t c - degrees centigrade i d - amperes fig. 2. extended output characteristics @ t j = 25oc 0 50 100 150 200 250 300 350 400 00.511.522.533.5 v ds - volts i d - amperes v gs = 15v 10v 7v 4v 5v 5.5v 6v
ixys reserves the right to change limits, test conditions, and dimensions. MMIX1F420N10T fig. 7. input admittance 0 20 40 60 80 100 120 140 160 180 3.0 3.5 4.0 4.5 5.0 5.5 v gs - volts i d - amperes t j = 150oc - 40oc 25oc fig. 8. transconductance 0 50 100 150 200 250 300 350 0 20 40 60 80 100 120 140 160 180 i d - amperes g f s - siemens t j = - 40oc 150oc 25oc fig. 9. forward voltage drop of intrinsic diode 0 50 100 150 200 250 300 350 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 v sd - volts i s - amperes t j = 150oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 100 200 300 400 500 600 700 q g - nanocoulombs v gs - volts v ds = 50v i d = 210a i g = 10ma fig. 11. capacitance 0.1 1.0 10.0 100.0 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - nanofarads f = 1 mhz c iss c rss c oss fig. 12. forward-bias safe operating area 0 1 10 100 1,000 10,000 1 10 100 v ds - volts i d - amperes 25s 100s 1ms 10ms r ds(on) limit t j = 175oc t c = 25oc single pulse 100ms dc
? 2012 ixys corporation, all rights reserved MMIX1F420N10T fig. 14. resistive turn-on rise time vs. drain current 0 40 80 120 160 200 240 280 320 40 60 80 100 120 140 160 180 200 i d - amperes t r - nanoseconds t j = 25oc t j = 125oc r g = 1 ? , v gs = 10v v ds = 50v fig. 15. resistive turn-on switching times vs. gate resistance 100 200 300 400 500 600 700 12345678910 r g - ohms t r - nanoseconds 0 40 80 120 160 200 240 t d ( on ) - nanoseconds t r t d(on) - - - - t j = 125oc, v gs = 10v v ds = 50v i d = 100a i d = 200a fig. 16. resistive turn-off switching times vs. junction temperature 0 100 200 300 400 500 600 700 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 80 100 120 140 160 180 200 220 t d ( off ) - nanoseconds t f t d(off) - - - - r g = 1 ? , v gs = 10v v ds = 50v i d = 100a i d = 200a fig. 17. resistive turn-off switching times vs. drain current 0 100 200 300 400 500 40 60 80 100 120 140 160 180 200 i d - amperes t f - nanoseconds 60 100 140 180 220 260 t d ( off ) - nanoseconds t f t d(off) - - - - r g = 1 ? , v gs = 10v v ds = 50v t j = 25oc t j = 125oc fig. 13. resistive turn-on rise time vs. junction temperature 100 140 180 220 260 300 340 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds r g = 1 ? , v gs = 10v v ds = 50v i d = 200a i d = 100a fig. 18. resistive turn-off switching times vs. gate resistance 100 200 300 400 500 600 700 800 12345678910 r g - ohms t f - nanoseconds 100 200 300 400 500 600 700 800 t d ( off ) - nanoseconds t f t d(off) - - - - t j = 125oc, v gs = 10v v ds = 50v i d = 200a i d = 100a
ixys reserves the right to change limits, test conditions, and dimensions. MMIX1F420N10T ixys ref: MMIX1F420N10T (9v)12-15-11 fig. 19. maximum transient thermal impedance 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 pulse width - seconds z (th)jc - oc / w fig. 19. maximium transient thermal impedance .sadgsfgsf 0.4
? 2012 ixys corporation, all rights reserved pin: 1 = gate 5-12 = source 13-24 = drain package outline MMIX1F420N10T
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